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home >> products >> Semiconductor material >> Epitaxial wafers >> Silicon Epitaxial Wafer

 

NO.

Parameter

Values

1

Dopant

P: Boron

N: Phosphorus

2

Orientation

<100>, <111>

3

Resistivity

P, N: 0.01 ~ 80Ω·cm

4

Resistivity Radial Gradient

Reactor

Range

WIW

WTW

LPE3061

0.01-10

2.50%

3.50%

10月30日

4%

5%

ASM2000

0.01-3

2%

2%

3月30日

2%

3%

5

Thickness

1 ~ 150 μm

6

Thickness Radial Gradient

Reactor

Range

WIW

WIW

LPE3061

1-100

1%

2%

ASM2000

1-100

0.50%

1%

7

Stacking Faults

<10/cm2

 

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