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home >> products >> Semiconductor material >> Epitaxial wafers >> GaN Epitaxial Wafer

AlGaN/GaN HEMT Epi Wafer

 

HEMT Structure

AlxGa1-xN / AIN / GaN

AlxGa1-xN / GaN

AlxGa1-xN / AIN / GaN / AlyGa1-yN

Substrate

On-axis SiC,(0001) Si-face

AlxGa1-xN Dopant

Undoped

Al Composition

x≤0.4

Diameter

3 inch

4 inch

3 inch

4 inch

3 inch

4 inch

2DEG Mobility1)

≥1800-2/Vs

≥1400-2/Vs

≥1400-2/Vs

2DEG Concentration

>8.0E12/cm2
(0.25Al / 25nm AlxGa1-xN)

>6.0E12/cm2
(0.25Al / 25nm AlxGa1-xN)

>7.0E12/cm2
(0.25Al / 25nm AlxGa1-xN, GaN thickness 100 nm)

Sheet Resistance Uniformity2)

≤3%

≤5%

≤5%

≤5%

≤3%

≤5%

AlxGa1-xN Thickness Tolerance (nm)

±1.5

±1.5

±1.5

Al Composition Tolerance

±0.015

±0.015

±0.015

Wafer Warp
(μm)

≤35

≤40

≤35

≤40

≤40

≤45

GaN Buffer Crystallinity (arcsec.)

≤250

≤300

≤250

≤300

≤300

≤350

RMS (μm)
(5μmx5μm)

≤1

≤1

≤1

Edge Exclusion (mm)

3

5

3

5

3

3

Surface Particales (cm-2)3)

≤20

≤20

≤20

 

Note:

 

1) 2 DEG concentration/mobility and sheet resistance are determined by Contactless non-destructure measurement.

 

2) All uniformities are calculated by standard deviation (σ)/average.

 

3) The size of surface particles is larger than 0.8 micrometer.

 

4) Contact NEDITEK for specifications on multi-layer or unique epitaxy requests.