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home >> products >> Semiconductor material >> Epitaxial wafers >> GaAs Epitaxial Wafer

 

Items

HEMT

HFET

PHEMT

Customized products

Diameter (inch)1)

2-6

Substate

GaAs(001)

Defects (>0.8um)

<20cm-2

Dopping

Dopant

Silicon

Concentration

1E16 ~ 1E19cm-3

Doping Tolerance

±15%

Doping Uniformity

≤2%

Mobility (cm2/Vs)2)

>5000

>2000

>4000

-

In Composition3)

-

-

≤30%

-

Composition Tolerance3)

±5%

Uniformity4)

≤3%

 

Note:

 

1) 3 mm edge exclusion for 2 and 3 inch; 5 mm edge exclusion for 4 and 6 inch;

 

2) Net doping density is determined as an average value across the whole wafer by Hall measurement (5 pts);

 

3) Thickness and composition is determined as an average value across the wafer by HRXRD (5 pts);

 

4) All uniformities are measured by Lehighton;

 

5) Contact NEDITEK for specifications on multi-layer or unique epitaxy requests.