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home >> products >> Semiconductor material >> Epitaxial wafers >> SiC Epitaxial Wafer

Standard Specifications for SiC Epi wafer 76.2mm and 100mm

 

Substrate Orientation: Epitaxy is only available for off-axis substrates

Conductivity

n-type

p-type

Dopant

Nitrogen

Aluminum

Net Doping Density

ND -NA

NA -ND

Si-face

8E14 ~ 2E19/cm3

5E15 ~ 2E19/cm3

Tolerance

± 25%(Spec.)

±15%(Typical)

± 25%(Spec.)

±15%(Typical)

Uniformity

≤ 10%(Spec.)

≤ 7%(Typical)

≤ 10%(Spec.)

≤ 7%(Typical)

Thickness Range

 

 

0.2-20.0 microns

± 15% of selected thickness

± 15% of selected thickness

20.0-50.0 microns

± 10% of selected thickness

± 10% of selected thickness

Uniformity

≤ 4%

≤ 4%

 

Characteristics

Maximum Acceptability Limits

Test Methods

Defect Den Tions

Large Point Defects

10

Diffuse Illumination

Defects which exhibit a clear shape to the

unassisted eye and are > 50 microns across.

These features include spikes, adherent particles, chips and craters.

Scratches

10 lines < 2×wafer diameter

Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1.

Step Bunching

4.0° off-axis

NA

Step bunching is visible as a pattern of parallel lines running perpendicular to the major.

8.0° off-axis

<10% affected

Backside Cleanliness

 

Verified by inspecting for a uniform color to the Backside Cleanliness wafer backside.

Edge Chips

2 with radius 1.5 mm

Areas where material has been unintentionally removed from the wafer.

Surface Roughness

< 0.5 nm

AFM

10μm×10μm scan