1200V SiC MOSFET

Series: NDS 1200 V industrial-grade devices

The 1200V series spans 12.5–240 mΩ, 12.8–158 A and five package families, allowing engineers to compare conduction, switching-charge and layout tradeoffs before requesting a production quote. Its voltage class supports 800 V-class converters when bus tolerance, transient overshoot, cooling and short-circuit protection remain inside the selected device limits. SiC reduces high-frequency switching loss, while disciplined gate-drive and low-inductance layout control ringing and false turn-on.

Drain-source rating1200 V
On-resistance range12.5–240 mΩ
Drain current at 25°C12.8–158 A
Package optionsFive package families
Minimum order10 pcs
Supply optionsStandard and configured orders

Which 1200V SiC MOSFET Package And Resistance Range Fits The Converter?

The 1200V family combines five package options with on-resistance values from 12.5 mΩ to 240 mΩ, so current capability, gate charge, cooling and PCB assembly method must be compared together.

TO-247-4 and TO-247-4S add a Kelvin-source path for tighter gate control, TO-247-3 provides a familiar through-hole footprint, TO-263-7 supports low-profile board mounting, and TO-252 serves the 240 mΩ, 12.8 A end of the range.

Package	Available RDS(on)	Listed ID at 25°C	Representative NDS models	Design consequence
TO-247-4	12.5, 20, 30, 40, 60, 80, 140 mΩ	19–158 A	NDS010153, NDS010183–186, NDS010037	Kelvin-source connection separates the drive return from power-source current.
TO-247-4S	20, 30, 40 mΩ	63–109 A	NDS010187–189	Four-lead through-hole choice for compact high-speed switching loops.
TO-247-3	12.5, 20, 30, 40, 60, 80, 140 mΩ	19–158 A	NDS010151, NDS010179–182, NDS010030	Three-lead footprint suits established mechanical and PCB layouts.
TO-263-7	20, 30, 40, 60, 80, 140, 240 mΩ	12.8–109 A	NDS010175–178, NDS010155, NDS010042, NDS010156	Surface mounting supports a low-profile power stage with board-level thermal design.
TO-252	240 mΩ	12.8 A	NDS010157	Compact surface-mount option for the lower-current end of the 1200 V range.

When Does A 1200V SiC MOSFET Fit An 800 V-Class Power Stage?

A 1200V rating is a blocking-voltage class, not a recommended continuous DC-bus value; the usable bus depends on topology, tolerance, regenerative energy, commutation overshoot, altitude and insulation coordination.

The 1200V class suits many 800 V-class DC/DC, EV-charger, PV, storage and motor-drive stages when measured worst-case drain voltage remains below the device limit and current, switching loss and junction temperature stay inside the selected part’s ratings.

Voltage margin: combine maximum bus tolerance, regeneration and measured switching overshoot rather than comparing only nominal bus voltage.
Loss and cooling: calculate conduction, switching, gate-drive and reverse-conduction loss at the intended frequency and temperature.
Protection and commutation: tune overcurrent, short-circuit response, dead time and snubbing from double-pulse and system waveforms.

How Does A 1200V SiC MOSFET Change Loss, Drive And Layout Decisions?

A 1200V SiC MOSFET can reduce switching loss and remove IGBT tail current at higher switching frequency, but its faster voltage edges make gate-loop inductance, common-source inductance and dv/dt immunity more important.

The efficiency gain is realized only when the driver uses the selected part’s recommended gate voltages, the commutation loop is compact, false turn-on is controlled and overvoltage or short-circuit protection is tuned from measured waveforms.

Decision factor	1200V SiC MOSFET	High-voltage silicon MOSFET	IGBT
Switching behavior	Fast edges and low switching loss support higher-frequency conversion.	Familiar drive behavior, but switching and conduction loss rise in high-voltage, high-power operation.	Tail current increases turn-off loss as switching frequency rises.
Gate drive and layout	Device-specific gate voltage, strong dv/dt immunity and low-inductance loops are essential.	Usually more tolerant of conventional layouts at lower switching speed.	Gate drive remains important, while edge rates are commonly slower.
System consequence	Can reduce magnetic and cooling size when EMI and protection are engineered for fast switching.	May offer lower device cost where frequency and efficiency targets are moderate.	Can remain cost-effective at high current and low-to-medium switching frequency.

1200V SiC MOSFET Series Specifications

The range below consolidates the industrial-grade 1200 V NDS devices for initial selection; final design limits come from the selected part-number datasheet.

Request a Quote ↗Online Chat ↗

Product series	1200V SiC MOSFET Series
Available models	25 NDS industrial-grade part numbers across five package families
Product category	Industrial-grade discrete silicon carbide MOSFET
Drain-source rating	1200 V
On-resistance range	12.5–240 mΩ across the available series
Semiconductor type	Silicon carbide insulated-gate power MOSFET
Package options	TO-263-7, TO-247-3, TO-247-4, TO-247-4S or TO-252
Maximum junction temperature	175°C
Marking and traceability	Part number and production-lot identification on package or packing label
Packaging unit	Sold per piece; tube, tray or reel packing selected by package and quantity

1200V SiC MOSFET Performance And Operating Conditions

Electrical values are series limits from the current selection table. Each selected part is evaluated at its intended gate voltage, current, temperature and switching circuit.

12.5 mΩLowest listed RDS(on)

158 AHighest listed ID at 25°C

17.5–230 nCTotal gate-charge range

73.2–652 WListed total dissipation range

Switching applicationsHigh-voltage DC switching in inverters, chargers, converters and motor drives

Junction-temperature limitUp to 175°C; thermal design must keep the selected device below its limit

Voltage and current range1200 V blocking class with listed ID from 12.8 A to 158 A at 25°C

Gate drive and installationThe selected part datasheet defines gate voltage and protection settings; low-inductance gate and power loops plus package-specific cooling control switching stress

1200V SiC MOSFET MOQ, Price And Delivery

Quote requests should identify the NDS part number, package, quantity and target delivery date so stock and production terms can be matched to the design.

Minimum order quantity10 pcs for standard packaged samples; production quantities quoted by part number
Sample policyPaid samples available from 1 pc, subject to part-number stock
Sample lead time3–5 working days for stocked samples
Bulk lead time2–4 weeks for standard packaged parts after order confirmation

Starting price and availabilityFrom USD 6.90 per piece, EXW; In stock.
PackagingESD-protective tube, tray or reel with moisture-barrier outer packing as required by package
Payment termsT/T in advance for samples; production terms stated on the quotation
Shipping supportExpress courier for samples; air or sea freight for production orders; buyer-arranged pickup supported

1200V SiC MOSFET Manufacturer And Design-In Support

Ntesy Technology Company Limited supplies the neditek 1200 V SiC device range from Nanjing, China, with selection and integration support for power-electronics projects.

Exterior of the neditek semiconductor facility in Nanjing

Ntesy Technology Company Limited

The manufacturer supports product selection, packaged devices, testing and design-in work for high-voltage control, power conversion and motor-drive applications.

Standard NDS packaged devices and configuration review
Package, gate-charge and thermal tradeoff support
Chip, packaging, testing and system-integration capabilities
Export support for Europe, Asia, Africa and South America

Request A 1200V SiC MOSFET Quote By Part Number

Phone: +86-25-86858581
Email: sales@neditek.com
WhatsApp: +86-25-86858581
Address: 524 Zhongshan East Road, Nanjing, Jiangsu Province, China