Neditek
1700V SiC MOSFET Module
Part Number: NDS010214
Rated at 1700 V and 133 A with 18 mΩ on-resistance, NDS010214 uses a full-plastic SOT-227 package, integrated SiN ceramic insulation and at least 2.5 kVAC isolation for high-voltage converter and inverter design. Order planning starts with one-module engineering samples, a 7–10 working-day sample route and configurable production support for repeat builds. SiC switching reduces tail-current loss while tighter gate-loop, insulation and thermal design protect system reliability.
- Drain-Source Voltage1700 V
- Rated Drain Current133 A
- On-Resistance18 mΩ
- PackageFull-plastic SOT-227
- Isolation Voltage≥2.5 kVAC
- Sample MOQ1 module
How The NDS010214 Ratings Shape Bus, Thermal And Gate-Loop Design
NDS010214 combines a 1700 V blocking class, 133 A current rating and 18 mΩ on-resistance in a full-plastic SOT-227 format.
The rating set suits high-voltage switched power stages when the design preserves transient voltage margin, derates current against the cooling system and controls the fast SiC commutation loop.
One-Module Evaluation Leads Into Planned Repeat Production
A one-module paid sample route lets an engineering team validate switching, cooling, insulation and mechanical integration before a production commitment.
1. Engineering Sample
One paid NDS010214 module supports electrical, thermal and mechanical evaluation.
2. Technical Approval
Driver, bus voltage, cooling, insulation, mounting and documentation are aligned before the production configuration is locked.
3. Repeat Production
Volume, delivery route and a production slot are planned after the sample design is approved.
Sample preparation is planned for 7–10 working days, while approved repeat orders move to a 4–6 week production window with ESD-safe export packing and courier, air or sea delivery.
SiC Fits Loss- And Density-Limited Designs; IGBT Can Fit Cost-Limited Low-Frequency Stages
A 1700 V SiC MOSFET module and a 1700 V IGBT module can serve similar voltage classes but shift loss, switching frequency, cooling, protection and cost in different directions.
| Decision Dimension | 1700 V SiC MOSFET Module | 1700 V IGBT Module |
|---|---|---|
| Switching Loss And Frequency | Lower turn-off tail current supports higher feasible switching frequency. | Higher tail-current loss often favors lower switching frequency. |
| Gate, Layout And EMI Work | Fast edges require tighter gate-loop, dv/dt, insulation and EMI control. | Mature drive methods still require high-voltage protection and thermal design. |
| Cooling And Power Density | Lower switching loss can reduce cooling or magnetic size. | Lower-frequency designs may accept larger thermal and magnetic hardware. |
| Device Cost And Protection | Higher device cost can be offset by system efficiency and density. | Lower device cost and short-circuit behavior can suit cost-limited stages. |
SiC is favored when switching loss, frequency and power density set the design, while IGBT can remain practical for lower-frequency stages where device cost and short-circuit tolerance carry more weight.
1700V SiC MOSFET Module Specifications
Confirmed NDS010214 electrical, package and isolation values are shown with their engineering units.
| Product Name | 1700V SiC MOSFET Module |
|---|---|
| Part Number | NDS010214 |
| Device And Package | SiC MOSFET, full-plastic SOT-227 |
| Drain-Source Voltage (VDSS) | 1700 V |
| On-Resistance (RDS(on)) | 18 mΩ |
| Semiconductor And Insulation | SiC MOSFET with integrated SiN ceramic insulation |
| Power And Mounting Interface | SOT-227 screw-terminal power interface and chassis heatsink mounting |
| Rated Isolation Voltage | ≥2.5 kVAC |
| Marking And Traceability | Part number and production-lot traceability |
| Packaging Unit | 1 module per ESD-safe protective pack |
1700V SiC MOSFET Module Operating Limits
The blocking, current and temperature ratings require system-level voltage margin, thermal derating and controlled SiC switching transitions.
1700V SiC MOSFET Module MOQ, Price And Delivery
Start with one engineering module, then align configuration, volume and delivery before the production order is released.
- Minimum Order Quantity1 module
- Engineering SamplePaid sample available; sample cost can be credited against an approved production order
- Sample Lead Time7–10 working days
- Production Lead Time4–6 weeks after specification and order approval
- Starting Price And AvailabilityFrom USD 199 per module, EXW; In stock. Configuration and volume affect the final quotation.
- ESD-Safe Export PackingIndividual protective pack inside export carton; custom tray packing for volume orders
- Payment TermsSamples: 100% before shipment; production: 30% deposit and 70% before dispatch
- Shipping OptionsDHL/FedEx courier, air freight or sea freight; buyer-arranged collection supported
Who Manufactures And Supports The 1700V SiC MOSFET Module?
Ntesy Technology Company Limited supports NDS010214 selection, samples, technical alignment and export delivery from Nanjing, China.
Ntesy Technology Company Limited In Nanjing
The company supports power electronics from semiconductor design and wafer processing through packaging, testing, module application and system integration. Engineering teams assist with design-in, sample configuration and production documentation.
- Power electronics, RF electronics and optoelectronic product scope
- Wafer processing, packaging, testing and quality-control support
- Standard products plus custom module and system-integration work
- Export documentation and delivery support for international orders
Request A 1700V SiC MOSFET Module Quote
Share the bus voltage, topology, switching frequency, cooling method, quantity and target schedule for NDS010214.
- Phone: +86-25-86858581
- Email: sales@neditek.com
- WhatsApp: +86-25-86858581
- Address: 524 Zhongshan East Road, Nanjing, Jiangsu Province, China