Semiconductor wafer in gloved handling for active RF mixer die production — Semiconductor wafer under clean handling for RF die production.

Semiconductor wafer inspection for active RF mixer die manufacturing — Wafer inspection used in semiconductor manufacturing.

USD 48 / die

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Active RF Mixer

Model: NDAC09019

RF / LO: 2–6 GHz
IF: DC–4 GHz
Conversion gain: Approx. 7 dB
Input P1dB: +9 dBm

RF / LO2–6 GHz
IFDC–4 GHz
Conversion gainApprox. 7 dB
Die size2.4 × 1.6 × 0.08 mm (0.094 × 0.063 × 0.003 in)
SupplyMade to order
MOQ100 dies

NDAC09019 separates its 2–6 GHz RF and LO windows from DC–4 GHz IF coverage, helping engineers verify a valid upconversion or downconversion plan before checking secondary requirements. Buyers can request 10-die engineering samples or 100-die production quotations with packaging, screening and delivery defined. Its active stage provides approximately 7 dB conversion gain with +9 dBm input P1dB.

Will the 2–6 GHz Ports Fit Your Frequency Plan?

Each port is evaluated independently before gain or package integration.

NDAC09019 is the active double-balanced die option in neditek's broader active RF mixer category.

RF input2–6 GHz

LO input2–6 GHz

IF portDC–4 GHz

Valid relationshipThe selected sum or difference product must remain inside the IF range.

A 5.2 GHz RF signal mixed with a 4.2 GHz LO can produce a 1.0 GHz difference IF. For upconversion, a 1.0 GHz IF with a 4.2 GHz LO can produce a 5.2 GHz RF output. The filter plan selects the intended product and rejects the image, LO feedthrough and unwanted mixing products.

What to Include in an NDAC09019 RFQ

A complete operating point lets neditek return a comparable technical and commercial response.

The RFQ contains the RF, LO and IF frequencies and power levels, selected sum or difference product, system impedance, target temperature range and required noise, isolation or linearity limits. It also identifies die quantity, engineering-sample or production status, assembly method, matching environment and screening expectations.

The quotation defines the applicable price, sample route, ESD-safe packaging, screening scope and delivery schedule. The published basis is USD 48 per die at the 100-die MOQ, with a 10-die paid engineering-sample option.

Where Active Conversion Gain Helps the Signal Chain

The active response can reduce downstream IF gain while the remaining noise and linearity requirements are closed at the system level.

Decision dimension	NDAC09019 active mixer	Passive mixer alternative
Conversion response	Approximately 7 dB conversion gain	Typically conversion loss
Drive and power	+13 dBm nominal LO drive plus an application-specific DC bias network	No DC bias for the mixer core; LO drive still required
Linearity review	+9 dBm input P1dB; the RFQ defines IIP3, noise figure and isolation targets	Often selected for higher linearity, subject to the chosen device
Integration impact	Can reduce downstream IF gain; biasing, thermal behavior and spurs need review	May require added IF gain but simplifies DC power design

NDAC09019 Active RF Mixer Specifications

Confirmed model data and supply-form information for design review.

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Product name	Active RF Mixer
Model	NDAC09019
Topology	Active double-balanced mixer die
RF frequency	2–6 GHz
LO frequency	2–6 GHz
IF frequency	DC–4 GHz
Conversion response	Approximately 7 dB gain
Nominal LO drive	+13 dBm
Input P1dB	+9 dBm
Die dimensions	2.4 × 1.6 × 0.08 mm (0.094 × 0.063 × 0.003 in)
Interface	Bare-die RF, LO and IF bond pads for a 50 Ω system design
Traceability	Lot and shipment traceability on outer packaging

Operating Window and Integration Conditions

These limits support initial planning; bias, noise, isolation, IIP3 and screening targets are defined in the quotation.

2–6 GHzRF / LO range

DC–4 GHzIF range

≈ 7 dBConversion gain

+9 dBmInput P1dB

Signal environment50 Ω RF signal chain with application-specific matching and bias network

Quotation temperature range−40 to +85 °C (−40 to +185 °F); extended screening quoted separately

Drive and compression+13 dBm nominal LO drive; +9 dBm input P1dB

Assembly limitsESD controls, short RF interconnects, stable grounding and an approved bias network are required

MOQ, Samples, Price and Delivery

Published terms provide a starting basis; the quotation confirms quantity, screening and shipment details.

MOQ100 dies
Sample policy10-die paid engineering sample option
Sample lead time7–10 business days
Bulk lead time4–6 weeks after order and screening approval

Starting price and availabilityUSD 48 per die at 100-die MOQ; PreOrder status, made to order
PackagingESD-safe waffle tray or gel pack with lot identification
Payment termsT/T; final terms stated in the quotation
Shipping supportCourier or air freight with standard export documents

Manufacturer and Design-In Support

Model supply is supported from Nanjing with RF device and integration capabilities.

Company facility exterior in Nanjing, China

Ntesy Technology Company Limited

Based at 524 Zhongshan East Road in Nanjing, the manufacturer supports RF device development, wafer processing, packaging and test, quality control, and module or system design-in. Orders are aligned to the requested operating point, assembly form and screening scope.

RF and electronic product experience originating in 1958
Chip design, wafer processing, packaging and test capabilities
Standard die supply plus application-specific design-in support
Export documentation support for international shipments

Request an NDAC09019 Quote

Phone: +86 25 8685 8581
Email: sales@neditek.com
WhatsApp: +86 25 8685 8581
524 Zhongshan East Road, Nanjing, Jiangsu Province, China