Neditek
Beam Lead PIN Diode
Model: NDGD044002
The NDGD044002 combines a 60 V reverse rating, 0.022 pF typical capacitance at 10 V, and 3.0 Ω typical resistance at 10 mA with silicon variants for different microwave circuit priorities. Gold beam leads attach to rigid dielectric substrates by thermocompression or conductive epoxy, with evaluation samples and batch ordering available through neditek. This low-parasitic chip serves microwave switches and attenuators from DC to 20 GHz within stated power limits.
- Reverse voltage60 V
- Capacitance0.022 pF typ at 10 V, 1 MHz
- Series resistance3.0 Ω typ at 10 mA, 500 MHz
- Chip size830 × 250 × 80 µm (0.0327 × 0.00984 × 0.00315 in)
- MOQ100 chips
- SupplyEvaluation samples and batch orders
Silicon beam lead chips for low- and medium-power switches and attenuators from DC to 20 GHz.
NDGD044 Variant Selection
The NDGD044002 balances a 60 V reverse rating with 0.022 pF typical junction capacitance at 10 V and 3.0 Ω typical series resistance at 10 mA. Its 830 × 250 × 80 µm (0.0327 × 0.00984 × 0.00315 in) chip fits compact microwave layouts.
For a lower resistance target, NDGD044001 measures 1.9 Ω typical at the same 10 mA and 500 MHz test point, with 0.055 pF typical capacitance at 10 V. NDGD044003 raises the reverse rating to 100 V and has 0.020 pF typical capacitance at 40 V; its series resistance is specified at 50 mA. NDGD044004 also reaches 100 V and 0.017 pF typical at 10 V, measured at 10 GHz, while its 450 ns carrier lifetime shifts the speed tradeoff. Bias and frequency differ across some of these published values, so the test conditions govern direct comparisons.
Assembly and Ordering for Beam Lead Chips
NDGD044002 uses gold beam leads that can be attached by thermocompression or conductive epoxy. A rigid dielectric substrate supports the chip during placement, and trained manual handling protects the narrow beams. The gold beam is also the heat path, so bonding quality affects both electrical contact and heat removal.
neditek supplies evaluation samples in an ESD-safe carrier and batch lots beginning at 100 chips. Samples are available on a paid basis with a 5–7 working day dispatch target. Batch orders have a 3–4 week lead time after order confirmation, with international air courier shipping. The part number, required quantity, substrate, attachment method and RF bias conditions can be sent in the inquiry form for a targeted quotation.
How Beam Leads Affect Microwave Switches
A PIN diode changes its RF impedance with bias. Forward current injects carriers into the intrinsic region and lowers series resistance; reverse bias removes the conductive path and leaves a small junction capacitance. In a series switch, that balance influences insertion loss and off-state isolation. Shunt arrangements use the two states differently, and the surrounding bias network contributes to the final circuit result.
The beam lead format avoids a separate wire bond and reduces lead parasitics in microstrip and stripline assemblies. This chip family is specified for low- and medium-power switching from DC to 20 GHz. Its maximum dissipation is 250 mW at 25 °C (77 °F), with linear derating above that point to zero at 175 °C (347 °F). Operating temperature is −65 to +150 °C (−85 to +302 °F).
NDGD044002 Specifications
Electrical values apply at the bias and frequency stated for each measurement.
| Product | Beam Lead PIN Diode |
|---|---|
| Part number | NDGD044002 |
| Device type | Silicon beam lead PIN diode |
| Chip dimensions | 830 × 250 × 80 µm (0.0327 × 0.00984 × 0.00315 in) |
| Reverse voltage, max | 60 V at IR = 10 µA |
| Junction capacitance, typ | 0.022 pF at VR = 10 V, f = 1 MHz |
| Junction capacitance, max | 0.025 pF at VR = 10 V, f = 1 MHz |
| Series resistance, typ | 3.0 Ω at IF = 10 mA, f = 500 MHz |
| Series resistance, max | 3.5 Ω at IF = 10 mA, f = 500 MHz |
| Forward voltage, typ | 1.0 V at IF = 10 mA |
| Carrier lifetime, typ | 35 ns at IF = 10 mA, IR = 6 mA |
| Intrinsic region thickness, typ | 4.5 µm (0.000177 in) |
| Materials and attachment | Silicon, gold beam leads; thermocompression or conductive epoxy |
| Packing unit | 100 chips per ESD-safe carrier lot |
Electrical and Operating Limits
NDGD044002 is a low- and medium-power RF switch and attenuator chip for microstrip and stripline circuits from DC to 20 GHz.
Ordering and Delivery
NDGD044002 is available for evaluation and production purchasing, with a USD starting price per chip.
- Minimum order100 chips
- Evaluation samplesPaid samples in ESD-safe carrier
- Sample dispatch5–7 working days
- Batch lead time3–4 weeks after order confirmation
- Starting price and availabilityFrom USD 4.50 per chip; in stock for inquiry.
- PackagingESD-safe Gel-Pak or equivalent carrier with lot label
- PaymentBank transfer before dispatch for initial orders
- ShippingInternational air courier in ESD-safe packing
Manufacturer and Supply Support
Ntesy Technology Company Limited supplies silicon RF devices and supports chip selection, sample orders and production purchasing.
Ntesy Technology Company Limited
The company is based at 524 Zhongshan East Road, Nanjing, Jiangsu Province, China. Its RF electronics activities span chip design, wafer processing, packaging and test support. Engineers can compare the NDGD044 silicon variants against bias, frequency and attachment requirements before ordering.
- Silicon RF diode product range
- Chip design and wafer process support
- Packaging and electrical test support
- International shipment coordination
Request NDGD044002 Pricing and Samples
- Phone: +86-25-86858581
- Email: sales@neditek.com
- WhatsApp: +86-25-86858581
- Address: 524 Zhongshan East Road, Nanjing, Jiangsu Province, China