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NEDITEK’s high-power-density gallium nitride power amplifier, with its outstanding energy-conversion efficiency and ultra-wideband coverage, significantly enhances signal transmission quality in communication and detection systems. As a tier-one manufacturer with an in-house 6-inch production line, NEDITEK offers end-to-end, full-chain services spanning epitaxial growth to module packaging. By eliminating intermediate-link costs, we ensure stable mass-supply capabilities and highly competitive ex-factory prices for you.
Gallium nitride power amplifiers are primarily used in 5G base stations, satellite communication terminals, meteorological detection systems, and industrial microwave heating equipment.
Using gallium nitride silicon carbide-based technology, the power density is as high as 5 to 8 watts per millimeter, which makes the gallium nitride power amplifier 40% smaller than traditional silicon-based devices at the same power output.
Through the low thermal resistance silicon carbide substrate combined with advanced packaging technology, the thermal resistance is controlled below 1.5 degrees Celsius per watt to ensure that the gallium nitride power amplifier can operate stably for a long time in a high temperature environment.
A single amplifier module can cover multiple octaves, with an instantaneous bandwidth of more than 2000 MHz, effectively reducing the bill of materials (BOM) count for gallium nitride power amplifiers in the system.
The drain efficiency exceeds 50% in the 55G communication band, significantly reducing the overall power consumption of large equipment such as base stations, helping end customers optimize thermal solutions and reduce power costs.
The gallium nitride power amplifier has excellent linear power output characteristics and supports complex multi-carrier signal modulation to ensure minimum distortion during signal transmission.
The core chip has a built-in 50 ohm impedance matching network, which simplifies the design complexity of the RF circuit board and shortens the system integration cycle of the gallium nitride power amplifier.
| Parameter Items | Specifications | Test conditions |
| Operating frequency band | 2.5 – 6.0 GHz | Continuous wave mode |
| Saturated output power | 46.5 dBm | Drain voltage 28V |
| Power Gain | 12.5 dB | Rated output power |
| Power Added Efficiency | 48% | Saturation point measurement |
| Operating current | 1.2 A | Static bias state |
| Operating temperature range | -55 to +125 °C | Substrate temperature |
| Input return loss | -12 dB | Typical values within the frequency band |
Compared with the traditional laterally diffused metal oxide semiconductor (LDMOS), the NEDITEK gallium nitride power amplifier provides higher cut-off frequency and power handling capability under the same volume, which improves the efficiency of the sub-6GHz frequency band by more than 20%.
Responsible for designing high-efficiency large-scale antenna arrays, which require gallium nitride power amplifier to reduce base station energy consumption and improve signal coverage.
When developing low-orbit satellite ground stations or vehicle terminals, the lightweight and broadband characteristics of gallium nitride power amplifier are used to achieve higher-rate data transmission.
Dedicated to industrial thawing, drying and chemical reaction control, the need for high-reliability gallium nitride power amplifier replace the traditional magnetron solution.
In the construction of modern air traffic control and weather monitoring network, the gallium nitride power amplifier is selected to improve the detection range and the environmental adaptability of the system.
Responsible for designing high-efficiency large-scale antenna arrays, which require gallium nitride power amplifier to reduce base station energy consumption and improve signal coverage.
When developing low-orbit satellite ground stations or vehicle terminals, the lightweight and broadband characteristics of gallium nitride power amplifier are used to achieve higher-rate data transmission.
Dedicated to industrial thawing, drying and chemical reaction control, the need for high-reliability gallium nitride power amplifier replace the traditional magnetron solution.
In the construction of modern air traffic control and weather monitoring network, the gallium nitride power amplifier is selected to improve the detection range and the environmental adaptability of the system.
Welcome to our Frequently Asked Questions page. We have compiled answers to common questions you may have, hoping to provide you with clear and quick solutions. If you cannot find the information you need here, please feel free to contact our customer support team.
NEDITEK’s high-power-density gallium nitride power amplifier, with its outstanding energy-conversion efficiency and ultra-wideband coverage, significantly enhances signal transmission quality in communication and detection systems. As a tier-one manufacturer with an in-house 6-inch production line, NEDITEK offers end-to-end, full-chain services spanning epitaxial growth to module packaging. By eliminating intermediate-link costs, we ensure stable mass-supply capabilities and highly competitive ex-factory prices for you.
0.5 to 18.0 GHz
Operating frequency
10 to 200 watts
Output power
35% to 55%
Drain efficiency
Using gallium nitride silicon carbide-based technology, the power density is as high as 5 to 8 watts per millimeter, which makes the gallium nitride power amplifier 40% smaller than traditional silicon-based devices at the same power output.
Through the low thermal resistance silicon carbide substrate combined with advanced packaging technology, the thermal resistance is controlled below 1.5 degrees Celsius per watt to ensure that the gallium nitride power amplifier can operate stably for a long time in a high temperature environment.
A single amplifier module can cover multiple octaves, with an instantaneous bandwidth of more than 2000 MHz, effectively reducing the bill of materials (BOM) count for gallium nitride power amplifiers in the system.
The drain efficiency exceeds 50% in the 55G communication band, significantly reducing the overall power consumption of large equipment such as base stations, helping end customers optimize thermal solutions and reduce power costs.
The gallium nitride power amplifier has excellent linear power output characteristics and supports complex multi-carrier signal modulation to ensure minimum distortion during signal transmission.
The core chip has a built-in 50 ohm impedance matching network, which simplifies the design complexity of the RF circuit board and shortens the system integration cycle of the gallium nitride power amplifier.
| Parameter Items | Specifications | Test conditions |
| Operating frequency band | 2.5 – 6.0 GHz | Continuous wave mode |
| Saturated output power | 46.5 dBm | Drain voltage 28V |
| Power Gain | 12.5 dB | Rated output power |
| Power Added Efficiency | 48% | Saturation point measurement |
| Operating current | 1.2 A | Static bias state |
| Operating temperature range | -55 to +125 °C | Substrate temperature |
| Input return loss | -12 dB | Typical values within the frequency band |
Responsible for designing high-efficiency large-scale antenna arrays, which require gallium nitride power amplifier to reduce base station energy consumption and improve signal coverage.
When developing low-orbit satellite ground stations or vehicle terminals, the lightweight and broadband characteristics of gallium nitride power amplifier are used to achieve higher-rate data transmission.
Dedicated to industrial thawing, drying and chemical reaction control, the need for high-reliability gallium nitride power amplifier replace the traditional magnetron solution.
In the construction of modern air traffic control and weather monitoring network, the gallium nitride power amplifier is selected to improve the detection range and the environmental adaptability of the system.
Responsible for designing high-efficiency large-scale antenna arrays, which require gallium nitride power amplifier to reduce base station energy consumption and improve signal coverage.
When developing low-orbit satellite ground stations or vehicle terminals, the lightweight and broadband characteristics of gallium nitride power amplifier are used to achieve higher-rate data transmission.
Dedicated to industrial thawing, drying and chemical reaction control, the need for high-reliability gallium nitride power amplifier replace the traditional magnetron solution.
In the construction of modern air traffic control and weather monitoring network, the gallium nitride power amplifier is selected to improve the detection range and the environmental adaptability of the system.
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