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6.0 Gunn Diodes

Features

  • Output power up to 250 mW
  • Operating temperature range: -55°C to +85°C
  • Storage temperature range: -55°C to +175°C
  • Simplified application circuit design
  • Ultra-wideband operation up to 110 GHz with strong anti-interference capability
  • Gold-plated heatsink structure for high performance and reliability
  • Customizable metal-ceramic package

Applications

  • Local oscillator sources
  • Medium/low-power transmission sources
Part
Number
Operating
Frequency
fO  (GHz)

Max
Low-field
Resistance
RO  (Ω)
IF=10mA
Max
Threshold
Voltage
Vt  (V)

Typ
Operating
Voltage
Vop  (V)

Max
Operating
Current
Iop  (mA)
V=Vop
Max
Output
Power
PO  (mW)

Min
Package
NDGD3600014~81.0~104.514500100T201
NDGD3600028~121070025T317
NDGD3600038~121070050T317
NDGD3600048~1210700100T317
NDGD3600058~1210700150T317
NDGD3600068~1210700200T317
NDGD3600078~1210700250T317
NDGD3600088~12820020T201
NDGD3600098~12825030T201
NDGD3600108~1210700100T201
NDGD3600118~12.410800200Bare Die
NDGD36001212~180.8~2.52.28850100Bare Die
NDGD36001312.4~180.8~4.06~8500~750100T185
NDGD36001412.4~180.8~4.013750120T202A
NDGD36001512.4~180.8~4.06~750100T185
NDGD36001612.4~180.8~4.06~81150200T185
NDGD36001718~26.5516010T201
NDGD36001818~26.5516020T201
NDGD36001918~26.5683030T185
NDGD36002018~26.5683050T185
NDGD36002118~26.56830100T185
NDGD36002218~26.56830150T185
NDGD36002318~26.56830200T185
NDGD36002426.5~404.51200100芯片
NDGD36002526.5~400.4~4.04~680050T122
NDGD36002626.5~400.4~4.04~61200100T122
NDGD36002740~600.4~2.52.5~4.575010T0811
NDGD36002840~600.4~2.52.5~4.5120050T085
NDGD36002940~600.4~2.52.5~4.51600100T085
6.0 Gunn Diodes(images 1)

IDM

Full IDM capability covering epitaxy, wafer, packaging,
ensuring stable supply and consistent performance.

6.0 Gunn Diodes(images 2)

Integration

Proprietary Si/GaAs/GaN technologies, with products spanning DC to
100 GHz for high-power, high-efficiency applications.

6.0 Gunn Diodes(images 3)

More Reliable

Strong customization and system-level design, providing
one-stop solutions from bare die to SIP & microsystems.

6.0 Gunn Diodes(images 4)

IDM

Full IDM capability covering epitaxy, wafer, packaging,
ensuring stable supply and consistent performance.

6.0 Gunn Diodes(images 5)

Integration

Proprietary Si/GaAs/GaN technologies, with products spanning DC to
100 GHz for high-power, high-efficiency applications.

6.0 Gunn Diodes(images 6)

More Reliable

Strong customization and system-level design, providing
one-stop solutions from bare die to SIP & microsystems.

RF & mm Wave Design Engineers

Pursue ultra-low parasitics & signal integrity for 100 GHz+ applications.

Test Instrument Architects

Need ultra-stable, low-noise RF components for precision test & measurement systems.

Power Electronics Designers

Seek high-efficiency SiC/Si devices for EV & industrial power systems.

Optoelectronics R&D Teams

Need high-performance OLED microdisplays & photodetectors for AR/VR & night vision.

RF & mm Wave Design Engineers

Pursue ultra-low parasitics & signal integrity for 100 GHz+ applications.

Test Instrument Architects

Need ultra-stable, low-noise RF components for precision test & measurement systems.

Power Electronics Designers

Seek high-efficiency SiC/Si devices for EV & industrial power systems.

Optoelectronics R&D Teams

Need high-performance OLED microdisplays & photodetectors for AR/VR & night vision.

Storage & Environment

Store in N2 cabinets/Gel-Pak; operate in Class 10,000 cleanroom.

ESD Precautions

ESD sensitive; grounded wrist straps and workstations required.

Handling & Pick-up

No metal tweezers on chip body; use vacuum tools or ESD-safe plastic tweezers on leads only.

Assembly & Bonding

Thermocompression: Stage 150℃ / Tool 250℃; precise force control.

Storage & Environment

Store in N2 cabinets/Gel-Pak; operate in Class 10,000 cleanroom.

ESD Precautions

ESD sensitive; grounded wrist straps and workstations required.

Handling & Pick-up

No metal tweezers on chip body; use vacuum tools or ESD-safe plastic tweezers on leads only.

Assembly & Bonding

Thermocompression: Stage 150℃ / Tool 250℃; precise force control.

Construction & Compliance

Parts & Materials /
Composition

Built with Precision, Engineered for Performance.” NEDITEK’s GaAs/GaN RF/mmWave chips feature optimized material architectures: GaAs devices deliver stable 100 GHz+ performance via gold metallization, semi-insulating GaAs substrates, and silicon nitride/glass passivation;

6.0 Gunn Diodes(images 7)
6.0 Gunn Diodes(images 8)
6.0 Gunn Diodes(images 9)
6.0 Gunn Diodes(images 10)

Pre-sales: Accelerating Your Design

6.0 Gunn Diodes(images 11)
6.0 Gunn Diodes(images 12)

After-sales: Quality & Supply Assurance

6.0 Gunn Diodes(images 13)

Pre-sales: Accelerating Your Design

6.0 Gunn Diodes(images 14)

After-sales: Quality & Supply Assurance

01 How does NEDITEK ensure consistent quality across diverse product portfolios (including RF/mmWave, power electronics, and OLED microdisplay devices)?

NEDITEK employs a unified, high-standard quality management system (QMS) tailored to semiconductor manufacturing, covering silicon-based ICs, GaAs/GaN RF devices, power electronics (SiC/Silicon), and OLED microdisplays. We implement strict process control and traceability systems across the entire IDM chain—from epitaxy and wafer fabrication to metallization, packaging, and final testing. By standardizing core processes and leveraging automated inspection platforms, we guarantee consistent performance, reliability, and dimensional accuracy across all product categories, meeting the stringent requirements and consumer applications.

02 What quality and reliability standards do NEDITEK’s products comply with to support mission-critical and industrial applications?

All NEDITEK products, including power semiconductors (SiC/GaN MOSFETs/SBDs) and multi-functional silicon ICs, comply with widely recognized international industry standards and high-grade quality requirements for demanding applications. We perform comprehensive reliability validation customized for each product category: power devices are tested under high-temperature reverse bias (HTRB), high-humidity conditions, and dynamic stress to ensure high efficiency and long-term operational stability; silicon-based multi-functional chips are verified for wide environmental adaptability and consistent signal performance. Adherence to ISO, IATF, and industrial-grade quality standards ensures reliable performance in harsh industrial, automotive, and high-reliability commercial environments.

03 How does NEDITEK maintain manufacturing precision and yield for high-value products?

NEDITEK maintains exceptional manufacturing precision and high, stable yields for high-value products including RF devices, power semiconductors, silicon-based multi-functional ICs and OLED microdisplays. We operate in strictly controlled cleanroom environments, implement real-time statistical process control, conduct full-process in-line testing and full-lifecycle traceability, and apply AI-driven quality optimization to minimize variations, eliminate defects, and ensure consistent performance across every batch.

04 What advanced testing and failure analysis (FA) capabilities does NEDITEK have to support product development and customer projects?

NEDITEK has built a comprehensive testing & FA laboratory covering all product lines. We provide full electrical parameter testing (including S-parameters, power characteristics, and display performance), environmental stress testing (temperature cycling, vibration, radiation), and advanced failure analysis (scanning electron microscopy, X-ray inspection, thermal analysis). Our professional engineering team delivers detailed FA reports and corrective action plans, helping customers quickly resolve design-in and manufacturing issues—accelerating R&D iteration and ensuring product robustness.

05 How does NEDITEK ensure supply chain stability and quality traceability for high-volume, long-cycle projects across all product categories?

As a vertical IDM manufacturer, NEDITEK controls the entire supply chain from substrate procurement to final production, eliminating third-party dependency risks. We implement end-to-end traceability systems for every batch of wafers, components, and finished products, enabling full lifecycle tracking. For high-volume and long-cycle projects, we maintain buffer stock planning, PCN/EOL lifecycle management, and flexible production scheduling. This ensures uninterrupted supply, on-time delivery, and consistent quality across silicon, RF, power electronics, and microdisplay product lines.

06 What process optimizations does NEDITEK apply to balance performance, miniaturization, and reliability?

NEDITEK leverages proprietary process integration technologies to optimize performance, size, and reliability. We adopt advanced packaging solutions (such as SIP and system-level integration) for multi-functional chips to reduce footprint while enhancing signal processing efficiency; for power devices, we optimize SiC wafer processes and thermal management designs to achieve high power density, low loss, and excellent heat dissipation. These optimizations ensure our power products meet the strict size, efficiency, and reliability requirements of compact industrial systems, automotive electronics, and other high quality platforms.

Manufacturing Excellence & Quality Assurance

6.0 Gunn Diodes(images 15)

Manufacturing Excellence & Quality Assurance

6.0 Gunn Diodes(images 16)
01 How does NEDITEK ensure consistent quality across diverse product portfolios (including RF/mmWave, power electronics, and OLED microdisplay devices)?

NEDITEK employs a unified, high-standard quality management system (QMS) tailored to semiconductor manufacturing, covering silicon-based ICs, GaAs/GaN RF devices, power electronics (SiC/Silicon), and OLED microdisplays. We implement strict process control and traceability systems across the entire IDM chain—from epitaxy and wafer fabrication to metallization, packaging, and final testing. By standardizing core processes and leveraging automated inspection platforms, we guarantee consistent performance, reliability, and dimensional accuracy across all product categories, meeting the stringent requirements and consumer applications.

02 What quality and reliability standards do NEDITEK’s products comply with to support mission-critical and industrial applications?

All NEDITEK products, including power semiconductors (SiC/GaN MOSFETs/SBDs) and multi-functional silicon ICs, comply with widely recognized international industry standards and high-grade quality requirements for demanding applications. We perform comprehensive reliability validation customized for each product category: power devices are tested under high-temperature reverse bias (HTRB), high-humidity conditions, and dynamic stress to ensure high efficiency and long-term operational stability; silicon-based multi-functional chips are verified for wide environmental adaptability and consistent signal performance. Adherence to ISO, IATF, and industrial-grade quality standards ensures reliable performance in harsh industrial, automotive, and high-reliability commercial environments.

03 How does NEDITEK maintain manufacturing precision and yield for high-value products?

NEDITEK maintains exceptional manufacturing precision and high, stable yields for high-value products including RF devices, power semiconductors, silicon-based multi-functional ICs and OLED microdisplays. We operate in strictly controlled cleanroom environments, implement real-time statistical process control, conduct full-process in-line testing and full-lifecycle traceability, and apply AI-driven quality optimization to minimize variations, eliminate defects, and ensure consistent performance across every batch.

04 What advanced testing and failure analysis (FA) capabilities does NEDITEK have to support product development and customer projects?

NEDITEK has built a comprehensive testing & FA laboratory covering all product lines. We provide full electrical parameter testing (including S-parameters, power characteristics, and display performance), environmental stress testing (temperature cycling, vibration, radiation), and advanced failure analysis (scanning electron microscopy, X-ray inspection, thermal analysis). Our professional engineering team delivers detailed FA reports and corrective action plans, helping customers quickly resolve design-in and manufacturing issues—accelerating R&D iteration and ensuring product robustness.

05 How does NEDITEK ensure supply chain stability and quality traceability for high-volume, long-cycle projects across all product categories?

As a vertical IDM manufacturer, NEDITEK controls the entire supply chain from substrate procurement to final production, eliminating third-party dependency risks. We implement end-to-end traceability systems for every batch of wafers, components, and finished products, enabling full lifecycle tracking. For high-volume and long-cycle projects, we maintain buffer stock planning, PCN/EOL lifecycle management, and flexible production scheduling. This ensures uninterrupted supply, on-time delivery, and consistent quality across silicon, RF, power electronics, and microdisplay product lines.

06 What process optimizations does NEDITEK apply to balance performance, miniaturization, and reliability?

NEDITEK leverages proprietary process integration technologies to optimize performance, size, and reliability. We adopt advanced packaging solutions (such as SIP and system-level integration) for multi-functional chips to reduce footprint while enhancing signal processing efficiency; for power devices, we optimize SiC wafer processes and thermal management designs to achieve high power density, low loss, and excellent heat dissipation. These optimizations ensure our power products meet the strict size, efficiency, and reliability requirements of compact industrial systems, automotive electronics, and other high quality platforms.

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From standard to bespoke, we provide precise support. Let’s create value together.

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6.0 Gunn Diodes(images 17)
6.0 Gunn Diodes(images 18)

Start The Conversation

From standard to bespoke, we provide precise support. Let’s create value together.

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