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2.0 Silicon Limiter Diode Chips

Features

  • Multi-stage protection coverage
  • Mesa structure with thin I-layer & low capacitance
  • Planar structure for high-power front/mid-stage protection
  • Multiple recovery time specifications available
  • Low insertion loss
  • Double-layer passivation protection

Applications

  • LNA protection
Part
Number
TypeBreakdown
Voltage
VBR   (V)
IR=10μA

Min
Breakdown
Voltage
VBR   (V)
IR=10μA

Max
Junction
Cap.
Cj   (pF)
(f=1MHz)
(VR=0V)
Max
Junction
Cap.
Cj   (pF)
(f=1MHz)
(VR=6V)
Max
Series
Res.
RS   (Ω)
(f=500MHz)
(IF=10mA)
Max
Carrier
Lifetime
τ_   (ns)
(IF=10mA)
(IR=6mA)
Typ
Thermal
Res.
RTH   (℃/W)
(IF=500mA)
(tW=10ms)
Max
I Region
Thickness
tI   (μm)

Anode
Diameter
ØD   (µm)


Typ
Package
or
Chip Size
(µm)
NDGD021007Low Res.20320.20.132.52040125350×350×150
NDGD021008Low Res.28400.150.122.52550125350×350×150
NDGD021009Low Res.20300.20.122.51035125350×350×150
NDGD021010Low Res.30600.150.12.52040230350×350×150
NDGD021011Low Res.50700.150.12.51530335350×350×150
NDGD021012Low Res.10018010.71370387200350×350×150
NDGD021001Low Res.1001750.150.07
(10V)
1.113050770350×350×150
NDGD021002Low Res.1201800.150.09
(38V)
1.423050865370×370×150
NDGD021013Low Res.1201800.260.21225040895350×350×150
NDGD021003Low Res.1201800.230.15
(38V)
1300608100350×350×150
NDGD021004Low Res.2003000.20.11
(10V)
1.5350392075350×350×150
NDGD021005Low Res.2500.260.141.210005015100350×350×150
NDGD021014Low Res.2500.451.25002615120450×450×150
NDGD021006Low Res.2500.250.15
(10V)
16002620150450×450×150
NDGD022001Fast Recovery15300.120.12.5580127350×350×150
NDGD022002Fast Recovery15300.20.152580130350×350×150
NDGD022003Fast Recovery20450.20.1525601.550350×350×150
NDGD022004Fast Recovery20350.240.23210501.550×140350×350×150
NDGD022005Fast Recovery30600.120.12.5750237350×350×150
NDGD022006Fast Recovery30600.20.152750247350×350×150
NDGD022007Fast Recovery30500.220.18
(10V)
2.51550238350×350×150
NDGD022008Fast Recovery45750.20.15210602.560350×350×150
NDGD022009Fast Recovery60750.150.11
(10V)
2.515703.538350×350×150
NDGD022010Fast Recovery801200.150.122.22060570350×350×150
NDGD022011Fast Recovery1201800.20.15
(38V)
27050790350×350×150
NDGD022012Fast Recovery1201800.60.5
(38V)
1.2100457165350×350×150
NDGD023001Metal
Ceramic
150.42 (CT)0.25 (CT)210180W122
NDGD023002Metal
Ceramic
15300.32 (CT)2.55180W205
NDGD023003Metal
Ceramic
20250.4 (CT)220180T209
NDGD023004Metal
Ceramic
20300.45 (CT)2.5101.540T209
NDGD023005Metal
Ceramic
20350.35 (CT)2201.580T209
NDGD023006Metal
Ceramic
25400.22201.580T209
NDGD023007Metal
Ceramic
28400.28 (CT)1.8
(Typ.)
20-251.580T1210
NDGD023008Metal
Ceramic
20450.35 (CT)251.560T1215
NDGD023009Metal
Ceramic
20450.45 (CT)2101.560T209
NDGD023010Metal
Ceramic
200.15~0.202101.5100
(Max.)
T124
NDGD023011Metal
Ceramic
200.20~0.252101.5100
(Max.)
T124
NDGD023012Metal
Ceramic
250.15~0.252201.5200
(Max.)
T124
NDGD023013Metal
Ceramic
300.10~0.152252200
(Max.)
T124
NDGD023014Metal
Ceramic
300.42 (CT)1.530250W122
NDGD023015Metal
Ceramic
30600.180.13 (CT)1.5172120W205
NDGD023016Metal
Ceramic
400.55~0.65150330
(Max.)
T204
NDGD023017Metal
Ceramic
400.55~0.65150330
(Max.)
T204
(Reverse)
NDGD023018Metal
Ceramic
400.5~0.6150350W202
NDGD023019Metal
Ceramic
801200.38 (CT)2.225560T209
NDGD023020Metal
Ceramic
1201800.4 (CT)250750W205
NDGD023021Metal
Ceramic
1201800.33 (CT)0.27 (CT, 38V)1.7300750T1210
NDGD023022Metal
Ceramic
1201800.4 (CT)1.7300750T209
NDGD023023Metal
Ceramic
1200.8 (CT)1.25001050
(100mA/1s)
W122
NDGD023024Metal
Ceramic
2500.53 (CT)0.45 (CT, 10V)1.28002025T1810
2.0 Silicon Limiter Diode Chips(images 1)

IDM

Full IDM capability covering epitaxy, wafer, packaging,
ensuring stable supply and consistent performance.

2.0 Silicon Limiter Diode Chips(images 2)

Integration

Proprietary Si/GaAs/GaN technologies, with products spanning DC to
100 GHz for high-power, high-efficiency applications.

2.0 Silicon Limiter Diode Chips(images 3)

More Reliable

Strong customization and system-level design, providing
one-stop solutions from bare die to SIP & microsystems.

2.0 Silicon Limiter Diode Chips(images 4)

IDM

Full IDM capability covering epitaxy, wafer, packaging,
ensuring stable supply and consistent performance.

2.0 Silicon Limiter Diode Chips(images 5)

Integration

Proprietary Si/GaAs/GaN technologies, with products spanning DC to
100 GHz for high-power, high-efficiency applications.

2.0 Silicon Limiter Diode Chips(images 6)

More Reliable

Strong customization and system-level design, providing
one-stop solutions from bare die to SIP & microsystems.

RF & mm Wave Design Engineers

Pursue ultra-low parasitics & signal integrity for 100 GHz+ applications.

Test Instrument Architects

Need ultra-stable, low-noise RF components for precision test & measurement systems.

Power Electronics Designers

Seek high-efficiency SiC/Si devices for EV & industrial power systems.

Optoelectronics R&D Teams

Need high-performance OLED microdisplays & photodetectors for AR/VR & night vision.

RF & mm Wave Design Engineers

Pursue ultra-low parasitics & signal integrity for 100 GHz+ applications.

Test Instrument Architects

Need ultra-stable, low-noise RF components for precision test & measurement systems.

Power Electronics Designers

Seek high-efficiency SiC/Si devices for EV & industrial power systems.

Optoelectronics R&D Teams

Need high-performance OLED microdisplays & photodetectors for AR/VR & night vision.

Storage & Environment

Store in N2 cabinets/Gel-Pak; operate in Class 10,000 cleanroom.

ESD Precautions

ESD sensitive; grounded wrist straps and workstations required.

Handling & Pick-up

No metal tweezers on chip body; use vacuum tools or ESD-safe plastic tweezers on leads only.

Assembly & Bonding

Thermocompression: Stage 150℃ / Tool 250℃; precise force control.

Storage & Environment

Store in N2 cabinets/Gel-Pak; operate in Class 10,000 cleanroom.

ESD Precautions

ESD sensitive; grounded wrist straps and workstations required.

Handling & Pick-up

No metal tweezers on chip body; use vacuum tools or ESD-safe plastic tweezers on leads only.

Assembly & Bonding

Thermocompression: Stage 150℃ / Tool 250℃; precise force control.

Construction & Compliance

Parts & Materials /
Composition

Built with Precision, Engineered for Performance.” NEDITEK’s GaAs/GaN RF/mmWave chips feature optimized material architectures: GaAs devices deliver stable 100 GHz+ performance via gold metallization, semi-insulating GaAs substrates, and silicon nitride/glass passivation;

2.0 Silicon Limiter Diode Chips(images 7)
2.0 Silicon Limiter Diode Chips(images 8)
2.0 Silicon Limiter Diode Chips(images 9)
2.0 Silicon Limiter Diode Chips(images 10)

Pre-sales: Accelerating Your Design

2.0 Silicon Limiter Diode Chips(images 11)
2.0 Silicon Limiter Diode Chips(images 12)

After-sales: Quality & Supply Assurance

2.0 Silicon Limiter Diode Chips(images 13)

Pre-sales: Accelerating Your Design

2.0 Silicon Limiter Diode Chips(images 14)

After-sales: Quality & Supply Assurance

01 How does NEDITEK ensure consistent quality across diverse product portfolios (including RF/mmWave, power electronics, and OLED microdisplay devices)?

NEDITEK employs a unified, high-standard quality management system (QMS) tailored to semiconductor manufacturing, covering silicon-based ICs, GaAs/GaN RF devices, power electronics (SiC/Silicon), and OLED microdisplays. We implement strict process control and traceability systems across the entire IDM chain—from epitaxy and wafer fabrication to metallization, packaging, and final testing. By standardizing core processes and leveraging automated inspection platforms, we guarantee consistent performance, reliability, and dimensional accuracy across all product categories, meeting the stringent requirements and consumer applications.

02 What quality and reliability standards do NEDITEK’s products comply with to support mission-critical and industrial applications?

All NEDITEK products, including power semiconductors (SiC/GaN MOSFETs/SBDs) and multi-functional silicon ICs, comply with widely recognized international industry standards and high-grade quality requirements for demanding applications. We perform comprehensive reliability validation customized for each product category: power devices are tested under high-temperature reverse bias (HTRB), high-humidity conditions, and dynamic stress to ensure high efficiency and long-term operational stability; silicon-based multi-functional chips are verified for wide environmental adaptability and consistent signal performance. Adherence to ISO, IATF, and industrial-grade quality standards ensures reliable performance in harsh industrial, automotive, and high-reliability commercial environments.

03 How does NEDITEK maintain manufacturing precision and yield for high-value products?

NEDITEK maintains exceptional manufacturing precision and high, stable yields for high-value products including RF devices, power semiconductors, silicon-based multi-functional ICs and OLED microdisplays. We operate in strictly controlled cleanroom environments, implement real-time statistical process control, conduct full-process in-line testing and full-lifecycle traceability, and apply AI-driven quality optimization to minimize variations, eliminate defects, and ensure consistent performance across every batch.

04 What advanced testing and failure analysis (FA) capabilities does NEDITEK have to support product development and customer projects?

NEDITEK has built a comprehensive testing & FA laboratory covering all product lines. We provide full electrical parameter testing (including S-parameters, power characteristics, and display performance), environmental stress testing (temperature cycling, vibration, radiation), and advanced failure analysis (scanning electron microscopy, X-ray inspection, thermal analysis). Our professional engineering team delivers detailed FA reports and corrective action plans, helping customers quickly resolve design-in and manufacturing issues—accelerating R&D iteration and ensuring product robustness.

05 How does NEDITEK ensure supply chain stability and quality traceability for high-volume, long-cycle projects across all product categories?

As a vertical IDM manufacturer, NEDITEK controls the entire supply chain from substrate procurement to final production, eliminating third-party dependency risks. We implement end-to-end traceability systems for every batch of wafers, components, and finished products, enabling full lifecycle tracking. For high-volume and long-cycle projects, we maintain buffer stock planning, PCN/EOL lifecycle management, and flexible production scheduling. This ensures uninterrupted supply, on-time delivery, and consistent quality across silicon, RF, power electronics, and microdisplay product lines.

06 What process optimizations does NEDITEK apply to balance performance, miniaturization, and reliability?

NEDITEK leverages proprietary process integration technologies to optimize performance, size, and reliability. We adopt advanced packaging solutions (such as SIP and system-level integration) for multi-functional chips to reduce footprint while enhancing signal processing efficiency; for power devices, we optimize SiC wafer processes and thermal management designs to achieve high power density, low loss, and excellent heat dissipation. These optimizations ensure our power products meet the strict size, efficiency, and reliability requirements of compact industrial systems, automotive electronics, and other high quality platforms.

Manufacturing Excellence & Quality Assurance

2.0 Silicon Limiter Diode Chips(images 15)

Manufacturing Excellence & Quality Assurance

2.0 Silicon Limiter Diode Chips(images 16)
01 How does NEDITEK ensure consistent quality across diverse product portfolios (including RF/mmWave, power electronics, and OLED microdisplay devices)?

NEDITEK employs a unified, high-standard quality management system (QMS) tailored to semiconductor manufacturing, covering silicon-based ICs, GaAs/GaN RF devices, power electronics (SiC/Silicon), and OLED microdisplays. We implement strict process control and traceability systems across the entire IDM chain—from epitaxy and wafer fabrication to metallization, packaging, and final testing. By standardizing core processes and leveraging automated inspection platforms, we guarantee consistent performance, reliability, and dimensional accuracy across all product categories, meeting the stringent requirements and consumer applications.

02 What quality and reliability standards do NEDITEK’s products comply with to support mission-critical and industrial applications?

All NEDITEK products, including power semiconductors (SiC/GaN MOSFETs/SBDs) and multi-functional silicon ICs, comply with widely recognized international industry standards and high-grade quality requirements for demanding applications. We perform comprehensive reliability validation customized for each product category: power devices are tested under high-temperature reverse bias (HTRB), high-humidity conditions, and dynamic stress to ensure high efficiency and long-term operational stability; silicon-based multi-functional chips are verified for wide environmental adaptability and consistent signal performance. Adherence to ISO, IATF, and industrial-grade quality standards ensures reliable performance in harsh industrial, automotive, and high-reliability commercial environments.

03 How does NEDITEK maintain manufacturing precision and yield for high-value products?

NEDITEK maintains exceptional manufacturing precision and high, stable yields for high-value products including RF devices, power semiconductors, silicon-based multi-functional ICs and OLED microdisplays. We operate in strictly controlled cleanroom environments, implement real-time statistical process control, conduct full-process in-line testing and full-lifecycle traceability, and apply AI-driven quality optimization to minimize variations, eliminate defects, and ensure consistent performance across every batch.

04 What advanced testing and failure analysis (FA) capabilities does NEDITEK have to support product development and customer projects?

NEDITEK has built a comprehensive testing & FA laboratory covering all product lines. We provide full electrical parameter testing (including S-parameters, power characteristics, and display performance), environmental stress testing (temperature cycling, vibration, radiation), and advanced failure analysis (scanning electron microscopy, X-ray inspection, thermal analysis). Our professional engineering team delivers detailed FA reports and corrective action plans, helping customers quickly resolve design-in and manufacturing issues—accelerating R&D iteration and ensuring product robustness.

05 How does NEDITEK ensure supply chain stability and quality traceability for high-volume, long-cycle projects across all product categories?

As a vertical IDM manufacturer, NEDITEK controls the entire supply chain from substrate procurement to final production, eliminating third-party dependency risks. We implement end-to-end traceability systems for every batch of wafers, components, and finished products, enabling full lifecycle tracking. For high-volume and long-cycle projects, we maintain buffer stock planning, PCN/EOL lifecycle management, and flexible production scheduling. This ensures uninterrupted supply, on-time delivery, and consistent quality across silicon, RF, power electronics, and microdisplay product lines.

06 What process optimizations does NEDITEK apply to balance performance, miniaturization, and reliability?

NEDITEK leverages proprietary process integration technologies to optimize performance, size, and reliability. We adopt advanced packaging solutions (such as SIP and system-level integration) for multi-functional chips to reduce footprint while enhancing signal processing efficiency; for power devices, we optimize SiC wafer processes and thermal management designs to achieve high power density, low loss, and excellent heat dissipation. These optimizations ensure our power products meet the strict size, efficiency, and reliability requirements of compact industrial systems, automotive electronics, and other high quality platforms.

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2.0 Silicon Limiter Diode Chips(images 17)
2.0 Silicon Limiter Diode Chips(images 18)

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