RF Discrete Transistor

P Band GaN Power Transistor

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P/N

Start Freq.
(MHz)

0 10 30 100 138 220 225 410 485

Stop Freq.
(MHz)

50 138 280 400 500 525 606 610 900

Psat (W)

2 5 10 15 20 40 50 100 200 300 400 500 530

PAE (%)

20 40 45 50 60 65 66 70 73 75
Gain (dB) Vd (V) Condition Type Package Dimensions (mm)
NDNM011741 0 400 2 20 14 28 CW Pre-Matched C64-1 6.35×13.0×2.7
NDNM011742 0 400 15 40 16 28 CW Pre-Matched JY04F635 6.35×18.9×2.7
NDNM011743 0 400 100 45 17 28 CW Pre-Matched JY04F586 5.8×29.0×3.0
NDNM011851 10 50 5 50 17 28 200us,8% Pre-Matched C406T 11.0×4.0×2.5
NDNM011852 10 50 50 60 17 28 200us,8% Pre-Matched JY02F064T 13.1×6.4×3.6
NDNM011744 30 900 40 60 17 28 CW Pre-Matched JY04F635 6.35×18.9×2.7
NDNM011745 100 500 200 66 14 36 CW Pre-Matched JY04F586 5.8×29.0×3.0
NDNM020001 138 138 10 65 17 30 CW Pre-Matched JY02F064T 13.1×6.4×3.6
NDNM012312 220 280 20 45 18 50 200us,10% Pre-Matched C164-2 24.0×17.4×5.0
NDNM012311 220 280 400 75 17 50 300us,15% Pre-Matched JY04F217 34.1×10.2×5.0
NDNM011746 225 525 300 70 17 48 CW Pre-Matched JY04F128 41.2×10.2×2.9
NDNM01203 410 610 500 70 17 42 1.3ms,35% Pre-Matched JY04F505 35.91×10.16×4.0
NDNM01207 485 606 530 73 17 36 3ms, 30% Pre-Matched JY04F217 34.1×9.8×5.1

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